Graphene on Ultra-flat Thermal SiO2 Substrate

Crystalline Structure of Graphene Film

HAADF Image of single-layer Graphene (bar = 1nm) on Holey Silicon Nitride product.
Ref: J. Kotakoski, et. al. Nano Letters, 2015

Graphene on the #21620-55 Ultra-flat Thermal SiO2 Substrates is offered to use as a research-ready experimental platform. The graphene sheet covers the complete 5x5mm diced substrate. Total usable area is approx. 75% due to unavoidable folds and wrinkles in the graphene sheet. Available with single, 2, 3-5, and 6-8 layer graphene sheets. Suitable for AFM imaging or as ultra-flat experimental platform. The specifications of the graphene are the same as mentioned below. Supplied in a Gel-Pak box and packed in class 10 clean room conditions. The Ultra-flat Thermal SiO2 Substrate consists of a 200nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675 µm.

5 x 5mm Diced Ultra-flat Thermal SiO2 Substrates with Graphene

High-resolution TEM image of single-layer Graphene showing a typical region for imaging.
Marker bar = 5nm

EELS Spectrum of single-layer Graphene

Typical Raman Spectrum of single-layer Graphene

Graphene Specifications

• The sheet resistance for a single layer of Graphene Film is 600Ω/sq.
• The thickness for a single layer of Graphene is approximately 0.35nm, Transparency is in the order of 96.4%.
  
• The thickness for 2 layers of Graphene is approximately 0.7nm, Transparency is in the order of 92.7%.
• The thickness for 3-5 layers of Graphene is between 1.0 - 1.7nm, Transparency ranges from 90.4 - 85.8%.
• The thickness for the 6-8 layers of Graphene is between 2.1 - 2.8nm, Transparency ranges from 83.2 - 78.5%.

The PELCO^® Graphene has an in-plane modulus of 0.9TPa, compared to 1.0 TPa for Graphene produced by the Scotch Tape™ method.