<10 nm (Contact; ContAL; ContGD; ContGb) <25nm (ElectriCont) <15nm (ContDLC) Also see individual probes.
Half Cone Angle
20°-25° along cantilever axis 25°-30° from side 10°-at the apex
Contact Tip radius <10nm
Application:
Contact Mode, Pulsed Force Mode (PFM)
General:
Rotated Monolithic silicon probe Symetric Tip Shape Alignment Grooves (except for 1, see below) (Chipsize 3.4 x 1.6 x 0.3mm)
Coating:
None
ContALTip radius <10nm
Application:
Contact Mode, Pulsed Force Mode (PFM)
General:
Rotated Monolithic silicon probe Symetric Tip Shape Alignment Grooves or None (Chipsize 3.4 x 1.6 x 0.3mm)
Coating:
30nm Al for enhanced reflectivity
ContGDTip radius <10nm
Application:
Contact Mode, Pulsed Force Mode (PFM)
General:
Rotated Monolithic silicon probe Symetric Tip Shape Alignment Grooves (Chipsize 3.4 x 1.6 x 0.3mm)
Coating:
70nm Au on back of cantilever
ContGBTip radius <25nm
Application:
Contact Mode, Pulsed Force Mode (PFM)
General:
Rotated Monolithic silicon probe Symetric Tip Shape Alignment Grooves (Chipsize 3.4 x 1.6 x 0.3mm)
Coating:
70nm Au on both sides of cantilever
ElectriCont-GTip radius <25nm
Application:
Contact Mode, Pulsed Force Mode (PFM) and Electric Modes like: • Scanning Capacitance Microscopy (SCM) • Electrostatic Force Microscopy (EFM) • Kelvin Probe Force Microscopy (KFM) • Scanning Probe Lithography
General:
Rotated Monolithic silicon probe Symetric Tip Shape Alignment Grooves (Chip size 3.4 x 1.6 x 0.3mm)
Coating:
Electrically conductive Cr/Pt on both sides of cantilever. 5nm Cr covered with 25nm Pt.
Contact Resistance: 300 ohms on Pt thin film surface
ContDLCTip radius <15nm
Application:
Contact Mode
General:
Rotated Monolithic silicon probe Symmetric Tip Shape Alignment grooves (Chip size 3.4 x 1.6 x 0.3mm)
Coating:
Diamond-Like-Coating on tip side of cantilever, 15nm thick Aluminum Reflex coating on detector side of cantilever, 30nm thick This probe uses an "on scan angle" symmetric tip to provide a more symmetric representation of features over 200nm.