Clean Room Packed Ultra-Flat Silicon Wafers

   

Ultra-Flat 4" Silicon Wafers

21610-4

Ultra-Flat 4" Silicon Wafer

Ultra-Flat 4" Silicon Wafer for demanding substrate studies. Can also be used as substrate for AFM or SEM samples by dicing the wafer into smaller pieces using a Scriber and the Wafer Cleaving / Glass Breaking Pliers. The 4" ultra-flat silicon wafer is shipped in a  4" Wafer Carrier.

Properties for 4" (100mm) Ultra-Flat Wafer:

Orientation: <100>
Type/Dopant: P/Boron
Grade: Prime / CZ Virgin
Resistivity: 10-20 Ohm-cm
Thickness: 525µm +/- 20µm
TTV: <4.00µm
SFPD: <2.0µm
Warp: ≤30µm
Bow: ≤20µm
Particles: ≤20@≥0.3µm
Front Surface: Polished
Back Surface: Etched
Flat: 2 per SEMI Standard
Site Flatness: <2.0µm
Roughness: Typically 2-3Å

---

---

Ultra-Flat 6" Silicon Wafers

21610-6

Ultra-Flat 6" Silicon Wafer

21610-55, 21610-57, 21610-510

5 x 5mm, 5 x 7mm, 10 x 10mm stealth-diced
Ultra-Flat Wafers

Ultra-Flat 6" diameter Silicon Wafer for demanding substrate studies. The 6" ultra-flat silicon wafer is shipped in a 6" Wafer Carrier.

Also available as 5 x 5mm, 5 x 7mm, 10 x10mm stealth-diced dies in Gel-Pak® boxes. Stealth dicing eliminates edge-chipping and cutting debris associated with saw dicing, providing the cleanest, most uniform product possible. All products are packed in class 10 clean room conditions.

Properties for 6" (150mm) Ultra-Flat Wafer:

Material: CZ Virgin Silicon Wafer
Grade: Prime
Diameter: 150mm
Orientation: <100>
Type/Dopant: P/Boron
Resistivity: 10-20 ohm-cm
Thickness: 675µm +/- 20µm
TTV: ≤2µm
Site Flatness: <=1µm
Warp: ≤30µm
Bow: ≤20µm
Particles: ≤30@≥0.2µm
Front Surface: Polished
Back Surface: Etched
Flat: 1 per SEMI Standard

---

---

Ultra-Flat SiO2 Substrates

21620-6

Ultra-Flat 6" Silicon Wafer

21620-55, 21620-57, 21620-510

5 x 5mm, 5 x 7mm, 10 x 10mm stealth-diced
Ultra-Flat Thermal SiO2 Wafers

The Ultra-Flat SiO2 substrates consist of a 200nm thermally grown amorphous SiO2 film on an ultra-flat silicon wafer. SiO2 is one of the most characterized materials and is widely used in semiconductor manufacturing, thin film research and as substrate for growing cells. It can be directly used as substrate for AFM and SEM imaging. The ultra-flat thermal silicon dioxide substrates are available in 6" wafer and conveniently diced 5 x 5mm, 5 x 7mm and 10 x 10mm chips. The 6" wafer is shipped in a 6" Wafer Carrier, the diced pieces are shipped in a Gel-Pak® box.

The special clean dicing process involves coating the wafer with photo resist before dicing and removing it after dicing which produces debris-free SiO2 substrates. All products are packed in class 10 clean room conditions.

Properties for thermal SiO2 substrates:

Material: CZ Virgin Silicon Wafer
Grade: Prime
Diameter: 150mm
Orientation: <100>
Type/Dopant: P/Boron
Resistivity: 10-20 Ohm-cm
Thickness: 675 +/- 25µm
TTV: ≤2µm
Site Flatness: ≤1µm
Warp: ≤30µm
Bow: ≤20µm
Particles: ≤20@≥0.2µm
Front Surface: Polished
Back Surface: Etched
Flat: 1 per SEMI Standard
2000A +/- 5% Thermal Oxide

---

---

Ultra-Flat SiNx Coated Substrates

21630-6

Ultra-Flat SiNx Coated Wafer

21630-55, 21630-57, 21630-510

5 x 5mm Diced Ultra-Flat SiNx on Silicon Substrates

The Ultra-Flat SiNx Substrates consist of ultra-flat silicon wafers coated with 200nm of amorphous nonstoichiometric ultra low-stress silicon nitride, similar to our silicon nitride grids. The ultra-flat SiNx substrates are available in 6" wafer and conveniently diced 5 x 5mm, 5 x 7mm and 10 x 10mm chips. The 6" wafer is shipped in a 6" wafer carrier; the diced pieces are shipped in a Gel-Pak^® Box.

The wafers are stealth diced, a special clean dicing process which produces debris-free substrates. All products are packed in class 10 clean room conditions.

Properties for thermal SiNx substrates:

• Material: CZ Virgin Silicon
• Wafer Grade: Prime
• Diameter: 150mm
• Orientation: <100>
• Type/Dopant: P/Boron
• Resistivity: 10-20 Ohm-cm
• Thickness: 675 +/- 25µm
• TTV: ≤2µm
• Site Flatness: ≤1µm
• Warp: ≤30µm
• Bow: ≤20µm
• Front Surface: Polished
• Back Surface: Etched
• Flat: 1 per SEMI Standard
• 2000A +/- 100A SiNx

---

---

Silocon Nitride Coated3mm Discs (blanks)

21555-10

Silicon Nitride Blank

These 3mm Silicon Discs have an ultra-flat (Ra 0.45 ± 0.2nm) 50nm ultra-low-stress Silicon Nitride layer on both sides. Also available with a hydrophilic or hydrophobic surface coating or just as a silicon disk. The disks are made with the same state-of-the-art manufacturing techniques as the PELCO^® Silicon Nitride Support Films. The disks are perfectly round and have the Easygrip™ edge for easy handling. Clean surface, no broken edges and free of debris often associated with other manufacturing processes. The ultra-low-stress film is nonstoichiometric and closer to SiN than Si3N4. They can be used for a number of applications:

• Specimen mounts for SEM and FESEM applications
• Specimen discs for AFM applications
• Blanks to build the PELCO® Liquid Cell™ together with the PELCO^® Silicon Nitride Membrane

Product Specifications

• Film Thickness: 50nm ultra-low-stress Silicon Nitride on both sides
• Hydrophilic: 5nm atomic layer-deposited hydroxylated alumina on 50nm ultra-low-stress silicon nitride.
• Hydrophobic: 5nm atomic layer-deposited alumina and fluoro-methylsilane on ultra-low-stress silicon nitride.
• Disk Thickness: 200µm silicon support
• Disk Diameter: 3mm
• Surface Roughness: The RMS (Rq) is 0.65 +/- 0.06nm which gives a mean roughness (Ra) of 0.45 +/- 0.02nm
• Packaging: The PELCO^® Silicon Nitride Discs with hydrophilic or hydrophobic coating are packaged under cleanroom conditions. The discs are packed in a vial holding 10 discs.

SDS (367KB PDF)